{"id":685517,"date":"2021-10-09T12:50:00","date_gmt":"2021-10-09T10:50:00","guid":{"rendered":"https:\/\/www.tomshardware.fr\/?p=685517"},"modified":"2023-06-22T16:28:53","modified_gmt":"2023-06-22T14:28:53","slug":"samsung-le-3-nm-lannee-prochaine-le-2-nm-en-2025","status":"publish","type":"post","link":"https:\/\/www.tomshardware.fr\/samsung-le-3-nm-lannee-prochaine-le-2-nm-en-2025\/","title":{"rendered":"Samsung : le 3 nm l’ann\u00e9e prochaine, le 2 nm en 2025"},"content":{"rendered":"\n

\u00c0 l\u2019occasion du Samsung Foundry Forum 2021, l\u2019entreprise cor\u00e9enne a d\u00e9voil\u00e9 sa feuille de route concernant ses proc\u00e9d\u00e9s de fabrication en 3 nm et 2 nm. Pour faire court, la soci\u00e9t\u00e9 pr\u00e9voit des premi\u00e8res puces en 3 nm d\u00e8s l\u2019ann\u00e9e prochaine et en 2 nm d\u2019ici quatre ans, soit en 2025.<\/p>\n\n\n\n

\"Image<\/a><\/figure><\/div>\n\n\n\n

D\u00e9taill\u00e9 en mars dernier, le 3 nm de Samsung<\/a> implique des transistors GAA (Gate-All-Around<\/em>) de type MBCFET (Multi-Bridge Channel Field-Effect Transistor<\/em>). Ce proc\u00e9d\u00e9 3GAE promet, par rapport au 7 nm FinFET, une hausse des performances de 30 % (\u00e0 puissance et complexit\u00e9 \u00e9gales), une consommation diminu\u00e9e de 50 % (\u00e0 fr\u00e9quences et complexit\u00e9 \u00e9gales), une r\u00e9duction de la surface de 45 %. Les premi\u00e8res puces en 3 nm d\u00e9barqueront dans le courant du premier semestre 2022. L\u2019hypoth\u00e8se d\u2019un report de plusieurs mois \u00e9voqu\u00e9e par SemiAnalysis fin juin<\/a> semble donc infirm\u00e9e. En outre, une seconde g\u00e9n\u00e9ration du proc\u00e9d\u00e9 3 nm arrivera dans le courant de l\u2019ann\u00e9e 2023.<\/p>\n\n\n\n

IBM d\u00e9voile le premier wafer grav\u00e9 en 2 nm<\/a><\/strong><\/p>\n\n\n\n

Du 2 nm en 2025<\/h2>\n\n\n\n

Concernant le 2 nm, Samsung a communiqu\u00e9 peu d\u2019informations. Nous savons uniquement que le proc\u00e9d\u00e9 mobilisera toujours des transistors GAA MBCFET et que la firme pr\u00e9voit une production de masse \u00e0 partir du second semestre 2025 ; cette \u00e9ch\u00e9ance impliquerait une commercialisation de premiers produits en 2 nm d\u00e9but 2026 au plus t\u00f4t. Samsung n\u2019a pas d\u00e9voil\u00e9 les gains fonctionnels qu\u2019apportera technologie de fabrication.<\/p>\n\n\n\n

Dr Siyoung Choi, pr\u00e9sident et chef de l’activit\u00e9 fonderie chez Samsung Electronics, a expliqu\u00e9 que le 2 nm “repr\u00e9senterait la troisi\u00e8me g\u00e9n\u00e9ration”<\/em> de proc\u00e9d\u00e9s de gravure utilisant les transistors GAA. En cons\u00e9quence, il estime “que la transition de l’industrie vers le 2 nm se fera en douceur gr\u00e2ce \u00e0 l’exp\u00e9rience acquise avec le 3 nm”<\/em>.<\/p>\n\n\n\n

Du c\u00f4t\u00e9 de la concurrence, TSMC continuera d\u2019employer des transistors FinFET pour ses proc\u00e9d\u00e9s N4 et N3. Le fondeur ta\u00efwanais ne pr\u00e9voit de passer \u00e0 des transistors GAA qu\u2019\u00e0 partir du 2 nm.<\/p>\n\n\n\n

Chez Intel, les n\u0153uds Intel 7, 4 et 3<\/a>, qui correspondent \u00e0 du 10 nm dans le premier cas et \u00e0 du 7 nm dans les deux autres, reposent eux aussi sur des FinFET. Les transistors GAA ne seront introduits qu\u2019en 2024, si tout se passe bien, par l\u2019interm\u00e9diaire des RibbonFET (la terminologie utilis\u00e9e par Intel) de l\u2019Intel 20A (pour 20 \u00e5ngstr\u00f6ms, soit du 2 nm).<\/p>\n\n\n\n\n\n\n\n

Source : Samsung<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Le fondeur cor\u00e9en amorce la transition vers des transistors GAA.<\/p>","protected":false},"author":87,"featured_media":685518,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"ep_exclude_from_search":false,"footnotes":""},"categories":[487,4068,4110],"tags":[514],"hubs":[],"acf":{"display_mode":"medium-img","post_show_excerpt":true,"post_source":"","hide_sidebar":false,"hide_advertising":false},"yoast_head":"\nSamsung : le 3 nm l'ann\u00e9e prochaine, le 2 nm en 2025<\/title>\n<meta name=\"description\" content=\"Le fondeur cor\u00e9en amorce la transition vers des transistors GAA.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.tomshardware.fr\/samsung-le-3-nm-lannee-prochaine-le-2-nm-en-2025\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" 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